ALEXANDRIA, Va., March 3 -- United States Patent no. 12,567,466, issued on March 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Nonvolatile memory devices and methods of operating the nonvolatile memory devices" was invented by Philkyu Kang (Suwon-si, South Korea), Chihyun Kim (Suwon-si, South Korea), Junehong Park (Suwon-si, South Korea), Jayang Yoon (Suwon-si, South Korea), Chiweon Yoon (Suwon-si, South Korea) and Dojeon Lee (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a method of operating a nonvolatile memory device including a voltage generator, the method including calculating a difference between a voltage level of a first word line no...