ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,619, issued on March 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Nonvolatile memory device" was invented by Dongha Shin (Hwaseong-si, South Korea) and Yohan Lee (Incheon, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A nonvolatile memory device includes; a memory cell area including a common source plate, at least one cell structure under the common source plate, and a first metal pad under the at least one cell structure, and a peripheral circuit area on which the memory cell area is mounted, including a middle area, a first edge area, and a second metal pad on the first edge area. The memory cell area fur...