ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,611, issued on March 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Memory device with cell pads having diagonal sidewalls" was invented by Junhyeok Ahn (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor apparatus includes: a substrate in which a plurality of active areas are provided; a plurality of word lines formed on the substrate and located in a plurality of word line trenches extending in a first direction parallel to a top surface of the substrate; a plurality of bit line structures formed on the substrate, and extending in a second direction parallel to the top surface of the sub...