ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,269, issued on March 24, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Semiconductor devices including separation structure" was invented by Sungmin Kim (Incheon, South Korea) and Daewon Ha (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a plurality of active regions on a substrate. A gate electrode is on, and intersects, the active regions. A plurality of source/drain regions are on the active regions, such that the source/drain regions are adjacent to opposite sides of the gate electrode and the gate electrode is between the source/drain regions. A separation structure...