ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,188, issued on March 24, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device and method of fabricating the same" was invented by Jonghyeok Kim (Suwon-si, South Korea), Kang In Kim (Suwon-si, South Korea), Kyuwan Kim (Suwon-si, South Korea), Min-Cheol Kim (Suwon-si, South Korea), Youngseok Kim (Suwon-si, South Korea) and Taewoong Oh (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate having a substrate groove extending in a first direction, a gate insulating layer conformally covering an inner wall of the substrate groove, a metal-containing pattern...