ALEXANDRIA, Va., March 24 -- United States Patent no. 12,586,650, issued on March 24, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Page buffer circuit and memory device including the same" was invented by Yongsung Cho (Suwon-si, South Korea), Insu Kim (Suwon-si, South Korea) and Daeseok Byeon (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory cell array, and a page buffer circuit including a plurality of page buffers selectively connected to memory cells via a plurality of bit lines, each of the plurality of page buffers including a sensing node. The sensing nodes may be charged to different levels during verification of programmi...