US Patent Issued to SAMSUNG ELECTRONICS on March 24 for "Method of manufacturing semiconductor device including silicon channel having increased mobility" (South Korean Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,204, issued on March 24, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Method of manufacturing semiconductor device including silicon channel having increased mobility" was invented by Siyeong Yang (Suwon-si, South Korea), Yuyeon Kim (Suwon-si, South Korea) and Minjun Oh (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes forming a stacked structure in which a plurality of interlayer insulating layers and a plurality of sacrificial layers are alternately stacked on a substrate, etching the stacked structure to form an opening exposing a part of the ...