US Patent Issued to SAMSUNG ELECTRONICS on March 24 for "Method of forming multiple-Vt FETS for CMOS circuit applications" (Texas Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,270, issued on March 24, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Method of forming multiple-Vt FETS for CMOS circuit applications" was invented by Wei-E Wang (Austin, Texas) and Mark S. Rodder (Dallas).

According to the abstract* released by the U.S. Patent & Trademark Office: "A field-effect transistor (FET) device having a modulated threshold voltage (Vt) includes a source electrode, a drain electrode, a channel region extending between the source electrode and the drain electrode, and a gate stack on the channel region. The gate stack includes an ultrathin dielectric dipole layer configured to shift the modulated Vt in a first direction, a high-...