ALEXANDRIA, Va., March 24 -- United States Patent no. 12,585,181, issued on March 24, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-Si, South Korea).
"Method of fabricating mask and method of fabricating semiconductor device using the mask" was invented by Sung-Hwan Bae (Seoul, South Korea) and Se Jin Park (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a mask by performing optical proximity correction (OPC) is provided. The method of fabricating a mask includes generating a target curve by using bias control points, extracting a first contour of an initial design mask by performing an OPC process, generating a first updated design mask, which is obtained by u...