US Patent Issued to SAMSUNG ELECTRONICS on March 24 for "Metal-doped switching device and semiconductor device including the same" (South Korean Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,219, issued on March 24, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-Do, South Korea).

"Metal-doped switching device and semiconductor device including the same" was invented by Sung Heo (Suwon-si, South Korea), Hajun Sung (Suwon-si, South Korea), Seongyong Park (Suwon-si, South Korea), Wooyoung Yang (Suwon-si, South Korea) and Dongjin Yun (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A switching device including a first electrode layer, a second electrode layer arranged to face the first electrode layer, and a selection layer arranged between the first electrode layer and the second electrode layer, wherein the f...