US Patent Issued to SAMSUNG ELECTRONICS on March 24 for "Memory device having load offset mismatch compensation" (South Korean Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,586,631, issued on March 24, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-Si, South Korea).

"Memory device having load offset mismatch compensation" was invented by Mi Ji Jang (Suwon-si, South Korea) and Young Hun Seo (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device including a memory cell array which includes a plurality of memory cells connected to each of a plurality of bit lines and word lines, a first bit line sense amplifier electrically connected to a first bit line through a first memory cell and a first connecting wiring and a second bit line sense amplifier electrically connected to a second bit lin...