US Patent Issued to SAMSUNG ELECTRONICS on March 24 for "Integrated circuit devices including a cross-coupled structure" (New York Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,249, issued on March 24, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Integrated circuit devices including a cross-coupled structure" was invented by Seungyoung Lee (Clifton Park, N.Y.) and Saehan Park (Clifton Park, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Cross-coupled structures are provided. Cross-coupled structures may include a first transistor, a second transistor, a third transistor, and a fourth transistor. The first transistor, the second transistor, and the fourth transistor may be spaced apart from each other in a first direction, and the third transistor and the second transistor may be stacked in a...