ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,304, issued on March 24, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Image sensor including a buried gate" was invented by Hyuksoon Choi (Suwon-si, South Korea) and Daekun Ahn (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "An image sensor includes a semiconductor substrate including a first surface and a second surface and having a photoelectric conversion region disposed therein. A floating diffusion region is disposed within the semiconductor substrate. The floating diffusion region is adjacent to the first surface. A buried gate structure is disposed within a buried gate trench extending from the fi...