ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,669, issued on March 17, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Vertical memory device" was invented by Yongseok Kwon (Seoul, South Korea), Youngsik Rho (Changwon-si, South Korea), Sangwon Park (Seoul, South Korea), Sungwhan Seo (Hwaseong-si, South Korea), Dongkyu Lee (Hwaseong-si, South Korea) and Jaeyong Jeong (Yongin-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device including a first substrate extending in a first direction and a second direction perpendicular to the first direction, the first substrate including a memory cell region and a first peripheral circuit region, and a second ...