ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,653, issued on March 17, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Semiconductor devices and method of manufacturing the same" was invented by Junhyoung Kim (Suwon-si, South Korea), Joonyoung Kwon (Suwon-si, South Korea), Jiyoung Kim (Suwon-si, South Korea), Jinhyuk Kim (Suwon-si, South Korea) and Sukkang Sung (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a gate electrode structure, a first division pattern, and a memory channel structure. The gate electrode structure includes gate electrodes stacked in a first direction and extending in a second direction. The fir...