US Patent Issued to SAMSUNG ELECTRONICS on March 17 for "Scan register circuit performing fail bit count operation or position search operation and memory device including the same" (South Korean Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,579,061, issued on March 17, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Scan register circuit performing fail bit count operation or position search operation and memory device including the same" was invented by Makoto Hirano (Suwon-si, South Korea), Sang Soo Park (Suwon-si, South Korea), Seoyeon Choi (Suwon-si, South Korea) and Jae-Duk Yu (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory cell array configured to store data, a page buffer circuit configured to store data in the memory cell array or read data stored in the memory cell array, and a scan register circuit co...