ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,919, issued on March 17, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Nonvolatile memory devices and memory systems including the same" was invented by Do Hyung Kim (Suwon-si, South Korea), Ji Young Kim (Suwon-si, South Korea), Ji Won Kim (Suwon-si, South Korea), Suk Kang Sung (Suwon-si, South Korea) and Woo Sung Yang (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a nonvolatile memory device having improved crack detection reliability. The nonvolatile memory device comprises word lines that extend in a first direction, cell contact plugs that are electrically connected to the word l...