US Patent Issued to SAMSUNG ELECTRONICS on March 17 for "Indium gallium nitride red light emitting diode and method of making thereof" (California, New Mexico Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,774, issued on March 17, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Indium gallium nitride red light emitting diode and method of making thereof" was invented by Fariba Danesh (Los Altos Hills, Calif.), Richard P. Schneider Jr. (Albuquerque, N.M.), Fan Ren (Sunnyvale, Calif.), Michael Jansen (Sunnyvale, Calif.) and Nathan Gardner (Sunnyvale, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium n...