US Patent Issued to SAMSUNG ELECTRONICS on June 9 for "Semiconductor devices including silicon nitride (SiN), silicon oxycarbide (SiOC), or silicon oxycarbonitride (SiOCN) liners" (South Korean Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,834, issued on June 9, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor devices including silicon nitride (SiN), silicon oxycarbide (SiOC), or silicon oxycarbonitride (SiOCN) liners" was invented by Jiho Yoo (Suwon-si, South Korea), Kihyung Ko (Suwon-si, South Korea), Junsoo Kim (Suwon-si, South Korea), Hyunsup Kim (Suwon-si, South Korea) and Jihoon Cha (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include an active pattern on a substrate; an isolation pattern on the substrate, the isolation pattern covering opposite sidewalls of the active pattern; a liner on the ...