ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,816, issued on June 9, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-Si, South Korea).
"Method for fabricating semiconductor device" was invented by Kyu-Hee Han (Suwon-si, South Korea), Bong Kwan Baek (Suwon-si, South Korea), Sang Shin Jang (Suwon-si, South Korea), Koung Min Ryu (Suwon-si, South Korea), Jong Min Baek (Suwon-si, South Korea), Jung Hoo Shin (Suwon-si, South Korea), Jun Hyuk Lim (Suwon-si, South Korea) and Jung Hwan Chun (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating semiconductor device may include forming a source/drain pattern on a fin-type pattern, forming an etch stop film and a...