US Patent Issued to SAMSUNG ELECTRONICS on June 9 for "Interconnect structure of semiconductor device including metal pattern or via structure with sidewall spacer structure" (New York Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,653,017, issued on June 9, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Interconnect structure of semiconductor device including metal pattern or via structure with sidewall spacer structure" was invented by Jaemyung Choi (Niskayuna, N.Y.), Tae Sun Kim (Ballston Spa, N.Y.), Janggeun Lee (Delmar, N.Y.) and Kang-ill Seo (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device including at least one front-end-of-line (FEOL) element connected to an interconnect structure, the interconnect structure including: a 1st metal pattern or via structure with a spacer structure on a sidewall thereof; an...