US Patent Issued to SAMSUNG ELECTRONICS on June 30 for "Semiconductor devices including buffer layer structure" (South Korean Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,318, issued on June 30, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Semiconductor devices including buffer layer structure" was invented by Won Hee Choi (Seoul, South Korea), Sung Uk Jang (Hwaseong-si, South Korea), Dong Suk Shin (Suwon-si, South Korea), Bong Jin Kuh (Suwon-si, South Korea) and Kong Soo Lee (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided. A semiconductor device includes: a first active pattern spaced apart from a substrate and extending in a first direction; a second active pattern spaced apart further from the substrate than the first active patt...