US Patent Issued to SAMSUNG ELECTRONICS on June 23 for "Vertical PN connection in multi-stack semiconductor device" (South Korean, American Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,710, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea).

"Vertical PN connection in multi-stack semiconductor device" was invented by WookHyun Kwon (Hwaseong-si, South Korea), Byounghak Hong (Latham, N.Y.), Sooyoung Park (Halfmoon, N.Y.) and Kang-ill Seo (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A multi-stack semiconductor device includes: a substrate; a lower field-effect transistor including a lower channel structure, a lower gate structure surrounding the lower channel structure, and 1st and 2nd source/drain regions; and an upper field-effect transistor, on the lower field-effect transistor, including...