US Patent Issued to SAMSUNG ELECTRONICS on June 23 for "Semiconductor memory device and method for fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,606, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-Si, South Korea).

"Semiconductor memory device and method for fabricating the same" was invented by Ji Hun Noh (Suwon-si, South Korea), Beom Seo Kim (Suwon-si, South Korea) and Sung Gil Kim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device may include a substrate including an active area defined by an element isolation layer on the substrate, a word line crossing the active area and extending in a first direction, a bit line crossing the active area on the substrate and extending in a second direction, and a bit line contact ...