ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,590, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Semiconductor memory device and method for fabricating the same" was invented by Beom Seo Kim (Suwon-si, South Korea), Sung Gil Kim (Suwon-si, South Korea) and Ji Hun Noh (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device including a substrate including an active area defined by an element isolation layer, a bit line extending in a first direction on the substrate, a storage contact on each of both sides of the bit line and connected to the active area, a storage pad on the storage contact and connected t...