ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,601, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor memory device" was invented by Jul Pin Park (Suwon-si, South Korea), Jae Joon Song (Suwon-si, South Korea), Heon Jun Ha (Suwon-si, South Korea) and Dong-Sik Park (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a semiconductor memory device including a peripheral gate structure on a substrate, bitlines disposed on the peripheral gate structure and extending in a first direction, a protruding insulating pattern including channel trenches, extending in a second direction intersecting the first direction, channe...