ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,596, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Semiconductor memory device" was invented by Suncheul Kim (Suwon-si, South Korea), Taeyeon Kwon (Suwon-si, South Korea), Younjae Cho (Suwon-si, South Korea), Jihoon Kim (Suwon-si, South Korea) and Hongsung Moon (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device may include active regions defined on a substrate by a device isolation layer, each of the active regions including a first impurity region and a second impurity region, word lines on the active regions and extended in a first direction, capping in...