US Patent Issued to SAMSUNG ELECTRONICS on June 23 for "Semiconductor device and method of fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,680, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device and method of fabricating the same" was invented by Hyun-Kwan Yu (Suwon-si, South Korea), Sunyoung Lee (Suwon-si, South Korea) and Hyunwoo Park (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device comprises a substrate including an active pattern, a channel pattern on the active pattern, a source/drain pattern on the channel pattern, a gate electrode on the channel pattern, and a gate dielectric layer between the channel pattern and the gate electrode. The gate electrode includes an inner electro...