ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,951, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device" was invented by Junhyeok Ahn (Suwon-si, South Korea) and Jinkuk Bae (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first contact structure connected to the lower structure, a first conductive wiring connected to the first contact structure, a first etch-stop layer and an interlayer insulating layer sequentially provided on the first conductive wiring, a second contact structure passing through the first etch-stop layer, provided in the interlayer insulating layer, and connected ...