ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,607, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Semiconductor device" was invented by Junhyeok Ahn (Suwon-si, South Korea) and Myeongdong Lee (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include a device isolation layer on a substrate and defining an active region; and a word line structure in a gate trench defined by the device isolation layer and the active region. The word line structure may include a word line on a gate dielectric layer. The word line may include a second material layer including a doped semiconductor material on a first materia...