ALEXANDRIA, Va., July 15 -- United States Patent no. 12,664,087, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Memory device, CXL memory device, system in package, and system on chip including high bandwidth memory" was invented by Mingoo Kang (Suwon-si, South Korea), Joonyoung Chang (Suwon-si, South Korea) and Sungcheol Park (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A compute express link (CXL) memory device may include a high bandwidth memory (HBM) comprising a CXL base die and a plurality of core dies that are sequentially stacked on the CXL base die. The CXL base die may include an HBM interface intellectual property (IP) core config...