ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,936, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Integrated circuit device including gate contact" was invented by Yoonyoung Jung (Suwon-si, South Korea), Deokhan Bae (Suwon-si, South Korea), Juhun Park (Seoul, South Korea), Yuri Lee (Hwaseong-si, South Korea) and Sooyeon Hong (Yongin-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit device includes: a substrate including a device area and a field area; active regions extending in a first direction in the device area; a first gate structure extending in a second direction intersecting the first direction in the device a...