US Patent Issued to SAMSUNG ELECTRONICS on June 23 for "Diode and bipolar junction transistor for 3D SFET with BSPDN structure" (South Korean, American Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,667,007, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. LTD. (South Korea).

"Diode and bipolar junction transistor for 3D SFET with BSPDN structure" was invented by Byounghak Hong (Albany, N.Y.), Wookhyun Kwon (Hwaseong-si, South Korea) and Jaehong Lee (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A (3D) stacked field effect transistors (SFETs) device includes a first transistor structure including a first source/drain (S/D) region and a second S/D region, the second S/D region including a first side and a second side facing opposite to the first side, and a second transistor structure including a third S/D region and a fourth...