ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,193, issued on June 2, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Power device and method of manufacturing the same" was invented by Joonyong Kim (Suwon-si, South Korea), Sunkyu Hwang (Suwon-si, South Korea), Boram Kim (Suwon-si, South Korea), Jongseob Kim (Suwon-si, South Korea), Junhyuk Park (Suwon-si, South Korea), Jaejoon Oh (Suwon-si, South Korea) and Injun Hwang (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a power device and a manufacturing method thereof. A power device includes a compound semiconductor layer epitaxially grown on a substrate, a gate formed on the compound semico...