US Patent Issued to SAMSUNG ELECTRONICS on June 16 for "Semiconductor device with gate isolation structure" (South Korean Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,306, issued on June 16, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device with gate isolation structure" was invented by Kyoungwoo Lee (Suwon-si, South Korea), Yeonho Park (Suwon-si, South Korea), Minchan Gwak (Suwon-si, South Korea) and Hojun Kim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes active regions, gate structures intersecting the active regions and including gate electrodes, source/drain regions on the active regions on sides of the gate structures, and a gate isolation structure isolating gate structures, which oppose each other, from each o...