US Patent Issued to SAMSUNG ELECTRONICS on June 16 for "Semiconductor device and method of fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,307, issued on June 16, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Semiconductor device and method of fabricating the same" was invented by Hyun-Kwan Yu (Suwon-si, South Korea), Sunyoung Lee (Suwon-si, South Korea), Hayoung Jeon (Suwon-si, South Korea), Hwiseok Jun (Suwon-si, South Korea) and Ji Hoon Cha (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device comprises a substrate including NMOSFET and PMOSFET regions, first and second channel patterns on the NMOSFET and PMOSFET regions, respectively, and each including respective semiconductor patterns spaced apart from and vertically...