ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,351, issued on June 16, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Image sensor comprising deep device isolation pattern" was invented by Kook Tae Kim (Hwaseong-si, South Korea), Jingyun Kim (Seogwipo-si, South Korea), Jonghyeon Noh (Hwaseong-si, South Korea), Miseon Park (Hwaseong-si, South Korea) and Jaewoong Lee (Yongin-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "An image sensor includes: a substrate including a plurality of pixel regions, a first surface and a second surface opposite to the first surface; and a deep device isolation pattern disposed between adjacent pixel regions of the plurality of...