US Patent Issued to SAMSUNG ELECTRONICS on July 7 for "Semiconductor device having trenches defining two-dimensionally arranged protrusions and gate pattern sidewalls aligned with trench inner walls" (South Korean Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,452, issued on July 7, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Gyeonggi-Do, South Korea).

"Semiconductor device having trenches defining two-dimensionally arranged protrusions and gate pattern sidewalls aligned with trench inner walls" was invented by Juseong Min (Suwon-si, South Korea), Kyeonghoon Park (Suwon-si, South Korea), Jae-Bok Baek (Suwon-si, South Korea), Donghyuck Jang (Suwon-si, South Korea), Jeehoon Han (Suwon-si, South Korea) and Taeyoon Hong (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device include a substrate including a plurality of protrusions protruding from an upper surface thereof ...