US Patent Issued to SAMSUNG ELECTRONICS on July 7 for "Memory device performing leakage detection operation" (South Korean Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,676,199, issued on July 7, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Memory device performing leakage detection operation" was invented by Hyunee Lee (Suwon-si, South Korea) and Wandong Kim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "In some embodiments, the memory device includes a memory cell array including a plurality of memory blocks including a plurality of word lines, a pass transistor circuit including a plurality of pass transistors coupled to the plurality of word lines, a row decoder configured to provide a block selection voltage to first terminals and a driving voltage to second terminal...