US Patent Issued to SAMSUNG ELECTRONICS on July 7 for "Memory core circuit having cell on periphery (CoP) structure and memory device including the same" (South Korean Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,676,180, issued on July 7, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Memory core circuit having cell on periphery (CoP) structure and memory device including the same" was invented by Youngseok Park (Suwon-si, South Korea), Hyunchul Yoon (Suwon-si, South Korea), Jeongdon Ihm (Suwon-si, South Korea), Yeongwoo Kang (Suwon-si, South Korea), Yongjun Kim (Suwon-si, South Korea), Keonwoo Park (Suwon-si, South Korea), Chulkwon Park (Suwon-si, South Korea), Changyoung Lee (Suwon-si, South Korea) and Sanghoon Jung (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory core circuit includes a memory cell array i...