US Patent Issued to SAMSUNG ELECTRONICS on July 28 for "Transistor unit including shared gate structure, and sub-word line driver and semiconductor device based on the same transistor unit" (South Korean Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,519, issued on July 28, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Transistor unit including shared gate structure, and sub-word line driver and semiconductor device based on the same transistor unit" was invented by Byunghoon Cho (Yongin-si, South Korea), Inseok Baek (Suwon-si, South Korea), Hyeonok Jung (Daejeon, South Korea) and Beomyong Hwang (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor with a shared gate structure includes an active area and a gate. The active area has a body extending in a first direction on a substrate, and a protrusion extending in a second direction perpendicula...