US Patent Issued to SAMSUNG ELECTRONICS on July 28 for "Semiconductor device and method of fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,529, issued on July 28, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device and method of fabricating the same" was invented by Kyung Hee Cho (Suwon-si, South Korea), Seokhyeon Yoon (Suwon-si, South Korea), Hyeongrae Kim (Suwon-si, South Korea) and Jeewoong Shin (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes first and second active patterns on first and second PMOS regions, two first source/drain patterns spaced apart along a first direction on the first active pattern and a first channel pattern including first semiconductor patterns between the two first...