ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,476, issued on July 28, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-Si, South Korea).
"Semiconductor device and method for fabricating the same" was invented by Hong Sik Shin (Seoul, South Korea), Jeong Yeon Seo (Seoul, South Korea), Sung Woo Kang (Suwon-si, South Korea) and Dong Kwon Kim (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "The semiconductor device including an active pattern on a substrate and extending in a first direction, a gate structure on the active pattern, including a gate electrode extending in a second direction different from the first direction, a source/drain pattern on at least one side of the...