ALEXANDRIA, Va., July 28 -- United States Patent no. 12,694,945, issued on July 28, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Memory device including repair circuit and operating method thereof" was invented by Wonyoung Jang (Suwon-si, South Korea), Taewon Kim (Suwon-si, South Korea), Sanghee Kang (Suwon-si, South Korea) and Taeyun Kim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device including a repair circuit and an operating method of the memory device are provided. The operating method includes outputting a signal representing a pre-decoded faulty row address based on predecoding a faulty row address, outputting a signal representing a pre-...