ALEXANDRIA, Va., July 28 -- United States Patent no. 12,695,049, issued on July 28, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Ion beam deposition apparatus and ion beam deposition method using the same" was invented by SeungWan Yoo (Suwon-si, South Korea), Jeongyeon Lee (Suwon-si, South Korea), Dohyung Kim (Suwon-si, South Korea), Jaehong Park (Suwon-si, South Korea) and Dong-Chan Lim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An ion beam deposition method includes placing a substrate into an ion beam deposition apparatus, irradiating an ion beam from an ion beam source toward a target plate, and rotating the target plate during the irradiating of the i...