US Patent Issued to SAMSUNG ELECTRONICS on July 21 for "PJ junction device structure in semiconductor device with back side power delivery network (BSPDN) structure" (New York Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,264, issued on July 21, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"PJ junction device structure in semiconductor device with back side power delivery network (BSPDN) structure" was invented by Byounghak Hong (Latham, N.Y.), Sooyoung Park (Halfmoon, N.Y.) and Kang-ill Seo (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device that includes: at least one field-effect transistor and at least one PN junction device at a lateral side of the at least one field-effect transistor in a 1st layer; and at least one back side power delivery network (BSPDN) structure in a 2nd layer below the 1s...