ALEXANDRIA, Va., July 21 -- United States Patent no. 12,687,774, issued on July 21, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Overlay improvement method, and method of manufacturing semiconductor device comprising overlay improvement method" was invented by Jonghyun Hwang (Suwon-si, South Korea), Jaeil Lee (Suwon-si, South Korea) and Kyoungcho Na (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "An overlay correction method for improving an overlay parameter of an ultra-high order component includes: obtaining misalignment components of an overlay through measurement; converting the misalignment components into overlay parameters; applying a conversion logi...