ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,245, issued on July 21, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Integrated circuit device" was invented by Juri Lee (Suwon-si, South Korea), Taegon Kim (Suwon-si, South Korea), Sun-Ryung Oh (Suwon-si, South Korea) and Sihyung Lee (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit (IC) device is provided. The IC device includes: a channel region on a substrate; a gate on the channel region; a first gate dielectric film including a first portion and a second portion, the first portion being in contact with the channel region between the channel region and the gate, and the second ...