ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,200, issued on July 21, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Integrated circuit device" was invented by Jungmin Park (Suwon-si, South Korea), Hanjin Lim (Suwon-si, South Korea) and Hyungsuk Jung (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit device may include a transistor on a substrate and a capacitor structure electrically connected to the transistor. The capacitor structure may include a first electrode, a dielectric layer structure on the first electrode, and a second electrode on the dielectric layer structure. The dielectric layer structure may include a plurali...