ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,785, issued on July 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor memory device" was invented by Youngji Noh (Suwon-si, South Korea), Jongho Woo (Suwon-si, South Korea), Joo-Heon Kang (Suwon-si, South Korea), Kyunghoon Kim (Suwon-si, South Korea) and Myunghun Woo (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a gate stacked structure including gate patterns and insulating patterns that are alternately stacked with each other; a gate insulating layer on a sidewall of the gate stacked structure; a channel layer surrounded by the gate insulating layer; a s...